Two-Terminal Protonic Devices with Synaptic-Like Short-Term Depression and Device Memory
Two-Terminal Protonic Devices with Synaptic-Like Short-Term Depression and Device Memory
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DOI：
10.1002/adma.201400320
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发表时间：
2014-08-06
影响因子：
29.4
通讯作者：
Rolandi, Marco
中科院分区：
文献类型：
--
作者：
Josberger, Erik E.;Deng, Yingxin;Rolandi, Marco
具有PdHx质子传导接触和Nafion通道的双端质子器件实现25 ms尖峰、短期抑制和低能量存储器切换。
Two-terminal protonic devices with PdHx proton conducting contacts and a Nafion channel achieve 25 ms spiking, short term depression, and low-energy memory switching.