Structure and electrical properties of lanthanum-doped CaBi4Ti4O15–Bi4Ti3O12 intergrowth ferroelectric

Structure and electrical properties of lanthanum-doped CaBi4Ti4O15–Bi4Ti3O12 intergrowth ferroelectric
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掺镧CaBi4Ti4O15-Bi4Ti3O12共生铁电体的结构与电学性能

DOI:
10.1016/j.matlet.2015.05.011
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发表时间:
2015-10
期刊:
影响因子:
3
通讯作者:
Yongsheng Li
Yongsheng Li
中科院分区:
材料科学3区
文献类型:
--
作者:
Zhiyong Zhou;Shipeng Hui;Xianlin Dong;Yongsheng Li

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Structure and electrical properties of lanthanum-doped CaBi4Ti4O15–Bi4Ti3O12(CaBi(8−x)LaxTi7O27, CBT–BIT–xLa) intergrowth ferroelectric were studied. With increasing the La3+content, CBT–BIT–xLa showed increased lattice parameters and decreased grain sizes. The total La3+content in BIT part is similar to that in CBT part. The dielectric loss was decreased with La3+doping. Both remnant polarization (2Pr) and the coercive electric field (Ec) increase with increasing La3+content at 0.0≤x≤0.4, show maximum values of 24.5 μC/cm2and 60.8 kV/cm withx=0.4, and decrease whenx≥0.4. Meanwhile, the piezoelectric constant (d33) increases as the doping level of La3+increases from 0.0 to 0.8, gets a maximum value of 23.4 pC/N atx=0.8, and then decreases.
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