Molecular beam epitaxy of silicon-based heterostructure and its application to novel devices
Molecular beam epitaxy of silicon-based heterostructure and its application to novel devices
复制标题
硅基异质结构分子束外延及其在新型器件中的应用
DOI：
10.1143/jjap.33.3791
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发表时间：
1994
影响因子：
1.5
通讯作者：
K. Nakagawa
中科院分区：
文献类型：
--
作者：
M. Miyao;K. Nakagawa
从物理和工艺两个方面综述了近年来硅异质结构工程的研究进展。发展了利用分子束外延技术制备原子层掺杂结构、绝缘体上硅结构和应变控制的双异质结构，即Si/SiGe/Si和Si/硅化物/Si的先进方法。详细的表征提供了对这些新的晶体生长技术背后的物理现象的全面了解。还讨论了这些先进方法在新型器件制造中的应用。
Recent progress in Si heterostructure engineering is reviewed from physical and technological viewpoints. Advanced methods to fabricate atomic layer doping structures, Si on insulator structures, and strain controlled double heterostructures, i.e. Si/SiGe/Si and Si/silicide/Si using molecular beam epitaxy, are developed. Detailed characterization provides a comprehensive understanding of the physical phenomena behind these new crystal growth techniques. Application of these advanced methods to novel device fabrication is also discussed.