Crystallographic and magneto-optical studies of nanoscaled MnSb dots grown on GaAs
Crystallographic and magneto-optical studies of nanoscaled MnSb dots grown on GaAs
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GaAs 上生长的纳米级 MnSb 点的晶体学和磁光研究
DOI：
10.1063/1.126153
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发表时间：
2000
影响因子：
4
通讯作者：
M. Oshima
中科院分区：
文献类型：
--
作者：
M. Mizuguchi;H. Akinaga;K. Ono;M. Oshima
用分子束外延法在硫钝化的GaAs衬底上生长了标称厚度为0 ~ 1.40nm的MnSb外延薄膜。原子力显微镜分析表明，MnSb在衬底上形成纳米尺寸的团簇，并且团簇的聚结发生在标称厚度0.70和1.05 nm之间。当名义厚度达到临界值1.05 nm时，MnSb团簇的极性磁圆二色性强度突然增加。量子点之间的聚结与磁性圆二色性强度的急剧增加有关。
MnSb ultrathin films with the nominal thickness of 0–1.40 nm were grown on sulfur passivated GaAs substrates by molecular beam epitaxy. Atomic force microscopy analysis showed that MnSb formed nanosize clusters on the substrate, and the coalescence of the clusters occurred at the nominal thickness between 0.70 and 1.05 nm. The intensity of the polar magnetic circular dichroism of MnSb clusters suddenly increased when the nominal thickness reached the critical value of 1.05 nm. The coalescence among the dots can be correlated with the sharp increase of the magnetic circular dichroism intensity.