Recent progress of the native defects and p-type doping of zinc oxide
Recent progress of the native defects and p-type doping of zinc oxide
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氧化锌的本征缺陷和p型掺杂研究进展
DOI：
10.1088/1674-1056/26/4/047702
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发表时间：
2017
影响因子：
1.7
通讯作者：
Zheng You-Dou
中科院分区：
文献类型：
--
作者：
Tang Kun;Gu Shu-Lin;Ye Jian-Dong;Zhu Shun-Ming;Zhang Rong;Zheng You-Dou
氧化锌（ZnO）是一种具有直接带隙和高激子结合能的化合物半导体。ZnO在紫外波段的高效发光特性使其在短波长发光器件中具有潜在的应用前景。然而，有效的p型掺杂是非常困难的ZnO。由于其禁带宽度大、价带能量低，施主的自补偿和受主的高电离能是阻碍自由空穴浓度提高的两个主要问题。ZnO中的本征缺陷可分为类施主缺陷和类受主缺陷。这种自补偿主要来源于锌间隙和氧空位相关的施主。而VA族掺杂ZnO中的类受主缺陷锌空位被认为与复杂的浅受主有关。因此，理解本征缺陷的行为对于实现高效p型导电至关重要。同时，人们也提出了一些新的想法，如双受主共掺杂，受主掺杂等价元素合金化ZnO等，并且为p型掺杂开辟了新的方向。其中一些办法得到了积极评价。本文综述了近年来（2011年至今）国内外在本征缺陷和p型掺杂方面的研究进展。本文希望能对ZnO中p型掺杂的研究现状作一个全面的综述和描述，以供类似领域的研究者参考。
Zinc oxide (ZnO) is a compound semiconductor with a direct band gap and high exciton binding energy. The unique property, ie, high efficient light emission at ultraviolet band, makes ZnO potentially applied to the short-wavelength light emitting devices. However, efficient p-type doping is extremely hard for ZnO. Due to the wide band gap and low valence band energy, the self-compensation from donors and high ionization energy of acceptors are the two main problems hindering the enhancement of free hole concentration. Native defects in ZnO can be divided into donor-like and acceptor-like ones. The self-compensation has been found mainly to originate from zinc interstitial and oxygen vacancy related donors. While the acceptor-like defect, zinc vacancy, is thought to be linked to complex shallow acceptors in group-VA doped ZnO. Therefore, the understanding of the behaviors of the native defects is critical to the realization of high-efficient p-type conduction. Meanwhile, some novel ideas have been extensively proposed, like double-acceptor co-doping, acceptor doping in iso-valent element alloyed ZnO, etc., and have opened new directions for p-type doping. Some of the approaches have been positively judged. In this article, we thus review the recent (2011–now) research progress of the native defects and p-type doping approaches globally. We hope to provide a comprehensive overview and describe a complete picture of the research status of the p-type doping in ZnO for the reference of the researchers in a similar area.