Direct band-gap measurement on epitaxial Co2FeAl0.5Si0.5 Heusler-alloy films
Direct band-gap measurement on epitaxial Co2FeAl0.5Si0.5 Heusler-alloy films
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DOI：
10.1063/1.4916817
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发表时间：
2015-05-07
影响因子：
3.2
通讯作者：
Hirohata, Atsufumi
中科院分区：
文献类型：
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作者：
Alhuwaymel, Tariq F.;Carpenter, Robert;Hirohata, Atsufumi
在这项研究中，一个新开发的带隙测量技术已被用来测量外延Co2FeAl0.5Si0.5（CFAS）薄膜。采用超高真空分子束外延技术在MgO（001）衬底上沉积了CFAS薄膜。在室温下测量时，发现沉积膜的带隙类似于110毫电子伏。这种简单的技术提供了薄膜的半金属性质的宏观分析。这允许生长和退火条件的简单优化。(c)2015 AIP Publishing LLC.
In this study, a newly developed band-gap measurement technique has been used to characterise epitaxial Co2FeAl0.5Si0.5 (CFAS) films. The CFAS films were deposited on MgO(001) substrate by ultra high vacuum molecular beam epitaxy. The band-gap for the as deposited films was found to be similar to 110 meV when measured at room temperature. This simple technique provides a macroscopic analysis of the half-metallic properties of a thin film. This allows for simple optimisation of growth and annealing conditions. (c) 2015 AIP Publishing LLC.