Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy
Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy
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DOI：
10.1063/1.1791756
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发表时间：
2004-10-15
影响因子：
3.2
通讯作者：
Koguchi, N
中科院分区：
文献类型：
--
作者：
Mantovani, V;Sanguinetti, S;Koguchi, N
采用低温光致发光光谱分析了Ga覆盖率和生长后热退火对改进液滴外延(MDE)生长的低密度(大约1x10(9)cm(-2))自组装GaAs/AlGaAs量子点(QD)电子性能的影响。我们证明，利用 MDE 方法可以获得具有高光致发光效率的低密度、高效率 QD 样品。通过基于 Al-Ga 相互扩散的简单模型，发现并定量解释了取决于 Ga 覆盖和热退火的光致发光带的巨大变化。 (C) 2004 年美国物理研究所。
Low temperature photoluminescence spectroscopy is used to analyze the effects of the Ga coverage and of the postgrowth thermal annealing on the electronic properties of low density (approximate to1x10(9)cm(-2)) self-assembled GaAs/AlGaAs quantum dots (QDs) grown by modified droplet epitaxy (MDE). We demonstrate that with the MDE method it is possible to obtain low density and high efficiency QD samples with high photoluminescence efficiency. Large modifications of the photoluminescence band, which depend on Ga coverage and thermal annealing, are found and quantitatively interpreted by means of a simple model based on the Al-Ga interdiffusion. (C) 2004 American Institute of Physics.