A 700MHz output bandwidth, 30dB dynamic range, common-base mm-wave power detector
A 700MHz output bandwidth, 30dB dynamic range, common-base mm-wave power detector
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700MHz 输出带宽、30dB 动态范围、共基毫米波功率检测器
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
J. Fournier
中科院分区：
文献类型：
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作者：
A. Serhan;E. Lauga;J. Fournier
本文介绍了一种采用BiCMOS 55nm （ft/fmax = 320GHz/370GHz）工艺制作的v波段功率探测器。该检测器用于毫米波电路中，用于自动电平控制、内置测试和原位功率测量。探测器占地面积为0.0064mm2，在60GHz左右显示出1kΩ /13fF的等效输入电阻/电容。测量显示，在50GHz至66GHz带宽范围内，检测动态范围为30dB。由于在输入级使用了共基双极SiGe晶体管，最小可检测输入功率为-22dBm。测量输出带宽为700MHz。在标称偏置条件下，当输入功率为-22dBm时，探测器功耗为90μW，当输入功率为8.5dBm时，探测器功耗增加到800μW。这些表演超出了目前的水平。
This paper describes a V-Band power detector fabricated in a BiCMOS 55nm (ft/fmax = 320GHz/370GHz) process. The detector is to be used in millimeter-wave circuits for automatic level control, built-in test and in-situ power measurement. The detector occupies an area of 0.0064mm2 and exhibits an equivalent input resistance/capacitance of 1kΩ /13fF around 60GHz. Measurements show a detection dynamic range of 30dB over the 50GHz to 66GHz bandwidth. The minimum detectable input power is -22dBm thanks to the use of common base bipolar SiGe transistor at the input stage. The measured output bandwidth is 700MHz. In nominal bias conditions, the detector power consumption is 90μW for -22dBm input power and it increases to 800μW for 8.5dBm input power. These performances are beyond the current state-of-the-art.