Device Architecture Study in Fullerene-Based Organic Photovoltaics
Device Architecture Study in Fullerene-Based Organic Photovoltaics
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基于富勒烯的有机光伏器件结构研究
DOI:
10.1021/acs.jpcc.0c02956
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发表时间:
2020
期刊:
影响因子:
--
通讯作者:
Hsu, Julia W.
中科院分区:
文献类型:
--
作者:
Murthy, Lakshmi N.;Zhang, Boya;Hsu, Julia W.
The effect of device architecture on the performance of fullerene-based organic photovoltaic (OPV) devices has not been investigated so far. Here, we performed experimental and simulation studies on fullerene-based OPVs with conventional and inverted architectures to understand the contributions from photogeneration of carriers, carrier mobility, and vertical phase separation. Charge transfer from the active layer to the bottom transport layer was studied with surface photovoltage spectroscopy (SPS) measurements. Our results show that SPS signals and spectral shape depend strongly on donor concentration in the conventional architecture but not in the inverted architecture. Additionally, conventional OPV devices show better device current density–voltage performance than inverted devices, specifically producing higher short-circuit current density. Carrier generation alone cannot explain these results. X-ray photoelectron spectroscopy results show poly(3-hexylthiophene) (P3HT) enrichment on the air surface, which should have enhanced inverted device performance. Using a solar cell capacitor simulator, we studied the active layer thickness and carrier mobility effects and established the imbalance in carrier mobilities in these devices. This carrier mobility imbalance explains the architecture dependence in the SPS results, OPV device performance, and optimal active layer thickness, while total photogeneration rate and vertical phase separation predict results inconsistent with experimental observation.
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DOI:
--
发表时间:
2020
期刊:
影响因子:
--
作者:
Wei Jiang;Chen Tao;M. Stolterfoht;Hui Jin;M. Stephen;Qianqian Lin;R. C. Nagiri;P. Burn;I. Gentle
通讯作者:
I. Gentle
DOI:
10.1021/la061606p
发表时间:
2006-09
期刊:
Langmuir : the ACS journal of surfaces and colloids
影响因子:
--
作者:
Xiangjun Wang;T. Ederth;O. Inganäs
通讯作者:
Xiangjun Wang;T. Ederth;O. Inganäs
影响因子:
3.7
作者:
L. Murthy;Diego Barrera;Liang Xu;Aakash Gadh;F. Cao;Cheng;Yen‐Ju Cheng;J. Hsu
通讯作者:
J. Hsu
影响因子:
3.2
作者:
Brenner, Thomas J. K.;Hwang, Inchan;McNeill, Christopher R.
通讯作者:
McNeill, Christopher R.
影响因子:
41.2
作者:
Campoy-Quiles, Mariano;Ferenczi, Toby;Nelson, Jenny
通讯作者:
Nelson, Jenny