Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films
Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films
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DOI：
10.1093/ietele/e90-c.5.955
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发表时间：
2007-05
期刊：
影响因子：
--
通讯作者：
T. Endoh;K. Hirose;K. Shiraishi
中科院分区：
文献类型：
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作者：
T. Endoh;K. Hirose;K. Shiraishi
描述了超薄二氧化硅薄膜应力感生漏电流(SILC)的物理来源。假定两步陷阱辅助的隧穿过程伴随着俘获电子的能量驰豫过程，定量地找到了形成SiCL的陷阱位置的条件。根据O空位模型，提出了陷阱位置和陷阱态能量可以用空穴平均自由程和陷阱中心的原子结构来解释。
The physical origin of stress-induced leakage currents (SILC) in ultra-thin SiO 2 films is described. Assuming a two-step trapassisted tunneling process accompanied with an energy relaxation process of trapped electrons, conditions of trap sites which are origin of SICL are quantitatively found. It is proposed that the trap site location and the trap state energy can be explained by a mean-free-path of hole in SiO 2 films and an atomic structure of the trap site by the O vacancy model.