Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures
Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures
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AlGaN/GaN 异质结构中经典寿命和量子寿命之间的关系
DOI：
10.1088/0268-1242/16/5/321
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
J. Portal
中科院分区：
文献类型：
--
作者：
J. Harris;K. Lee;Tao Wang;S. Sakai;Z. Bougrioua;I. Moerman;E. Thrush;J. Webb;H. Tang;T. Martin;D. Maude;J. Portal
在低温和高磁场下，研究了来自不同来源、具有一定载流子密度和迁移率的一组 AlGaN/GaN 异质结构中的载流子传输。对 Shubnikov-de Haas 振荡进行了分析，以提取量子散射寿命 τq，并将其与源自低场迁移率的经典输运寿命 τt 进行比较。据观察，这些参数之间的关系系统地取决于所研究样品的低场迁移率，并且表明迁移率较高的样品受到来自靠近二维导电通道的中心的散射较少。
Carrier transport in a set of AlGaN/GaN heterostructures from different sources with a range of carrier densities and mobilities has been investigated at low temperature and high magnetic fields. The Shubnikov-de Haas oscillations have been analysed to extract the quantum scattering lifetime, τq, and this is compared with the classical transport lifetime, τt, derived from the low-field mobility. The relationship between these parameters has been observed to depend systematically on the low-field mobility of the samples studied, and indicates that higher-mobility samples suffer less scattering from centres close to the two-dimensional conducting channel.