Oscillation characteristics in terahertz transmission through a dipole-based metamaterial

Oscillation characteristics in terahertz transmission through a dipole-based metamaterial
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DOI:
10.1116/1.4913954
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发表时间:
2015-03
期刊:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
影响因子:
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通讯作者:
Jun Luo;Yehua Bie;Xinyu Zhang;Hongshi Sang;An Ji;C. Xie
Jun Luo;Yehua Bie;Xinyu Zhang;Hongshi Sang;An Ji;C. Xie
中科院分区:
其他
文献类型:
--
作者:
Jun Luo;Yehua Bie;Xinyu Zhang;Hongshi Sang;An Ji;C. Xie

文献摘要

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提出了一种在太赫兹传输过程中表现出振荡特性的双薄膜超材料。在半绝缘−衬底上生长了自由电子密度为4.7×10 17cmGaAs3的n型砷化镓薄膜。然后,利用传统的紫外光刻方法,在n-GaAs膜上制备金属薄膜,形成窄边排列的单间隙微结构。金属和n-GaAs膜形成肖特基结。双膜超材料的透射谱在0.1-1太赫兹范围内存在明显的起伏,频率间隔f=0.15太赫兹。实验结果表明,在0.1-1太赫兹范围内,局域振荡信号的频率范围与双膜超材料的特征透射谱的频率范围基本一致。在∼0.515太赫兹的中心频率测量了所制备的超材料的太赫兹特性透射谱,并对其进行了测试。
A dual-film metamaterial is proposed that presents oscillation characteristics during terahertz transmission. An n-type gallium arsenide (n-GaAs) film with a free electron density of 4.7 × 1017 cm−3 is grown on a semi-insulating GaAs wafer. Then, a metallic film, which is fabricated on the n-GaAs film, is patterned into an arrayed single-gap microstructure with narrowed edges using traditional ultraviolet photolithography methods. The metal and n-GaAs films form a Schottky junction. The transmission frequency spectrum of the dual-film metamaterial contains an obvious fluctuation with a frequency interval of f = 0.15 THz in the 0.1–1 THz range, and the experimental results show that the frequency region of the locally intensive oscillatory signal essentially agrees with that of the characteristic transmission spectrum of the dual-film metamaterial in the 0.1–1 THz range. The terahertz characteristic transmission spectrum of the fabricated metamaterial is measured at the central frequency of ∼0.515 THz, and...