Growth of KNbO3 Films by Electron-Cyclotron-Resonance-Assisted Pulsed Laser Deposition
Growth of KNbO3 Films by Electron-Cyclotron-Resonance-Assisted Pulsed Laser Deposition
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电子回旋共振辅助脉冲激光沉积 KNbO3 薄膜的生长
DOI：
10.1143/jjap.42.6019
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发表时间：
2003
影响因子：
1.5
通讯作者：
K. Nakamura
中科院分区：
文献类型：
--
作者：
T. Arai;S. Ito;K. Ishikawa;K. Nakamura
KNbO_3压电晶体的（110）切面具有较高的机电耦合系数kt，适合于产生纵波。采用电子回旋共振辅助脉冲激光沉积（ECR-PLD）技术在（100）MgO和（100）La掺杂的SrTiO 3衬底上生长了（110）KNbO 3外延薄膜。为了确定氧的ECR活化的效果，将通过ECR-PLD生长的膜的X射线衍射图案与在没有ECR活化的氧气氛中生长的膜的X射线衍射图案进行比较。因此，ECR-PLD技术被发现是非常有效的高品质KNbO 3薄膜的外延生长。讨论了KNbO_3薄膜的面内取向，结果表明KNbO_3薄膜的宏观面内结构具有四重旋转对称性。在La掺杂的SrTiO_3上生长的一些薄膜的（110）间距比正交KNbO_3的（110）间距稍长。这表明薄膜可能是（001）四重KNbO 3。
The (110) cut of KNbO3 piezoelectric crystal is suitable for generation of longitudinal waves, because of its high electromechanical coupling factor kt. Epitaxial (110) KNbO3 thin films have been grown on (100) MgO and (100) La-doped SrTiO3 substrates using an electron-cyclotron-resonance-assisted pulsed laser deposition (ECR-PLD) technique. In order to ascertain the effect of the ECR activation of oxygen, the X-ray diffraction pattern of a film grown by ECR-PLD is compared with that of a film grown in an oxygen atmosphere without ECR activation. As a consequence, the ECR-PLD technique is found to be notably effective for epitaxial growth of high-quality KNbO3 films. The in-plane orientation of the films is discussed and it is shown that the macroscopic in-plane structure of KNbO3 films should have a fourfold rotational symmetry. Some films grown on La-doped SrTiO3 have slightly longer (110) spacing than that of (110) orthorhombic KNbO3. This suggests that the films might be (001) tetragonal KNbO3.