New semiconductor alloy GaAs1-xBix grown by metal organic vapor phase epitaxy
New semiconductor alloy GaAs1-xBix grown by metal organic vapor phase epitaxy
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DOI：
10.1143/jjap.37.l1283
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发表时间：
1998-11-01
期刊：
影响因子：
--
通讯作者：
Okamoto, H
中科院分区：
文献类型：
--
作者：
Oe, K;Okamoto, H
利用金属有机气相外延（MOVPE）技术制备了一种新型半导体合金材料GaAs_（1-x）Bix。需要低的生长温度，例如365摄氏度，以获得合金。合金层的X射线衍射测量表明，衍射图案是令人满意的。GaAsBi合金中的最大GaBi含量从晶格常数估计为2%左右，这是一致的估计从二次离子质谱（西姆斯）测量。在光致发光（PL）测量中，从10至300 K观察到单峰光谱。PL峰能量的温度变化小到0.1meV/K。
A new semiconductor alloy material, GaAs1-xBix has been created by Metal Organic Vapor Phase Epitaxial (MOVPE) growth. A low growth temperature, such as 365 degrees C, is required to obtain the alloy. X-ray diffraction measurements of alloy layers reveal that the diffraction patterns are satisfactory. The maximum GaBi content in the GaAsBi alloy estimated from the lattice constant is around 2%, which is consistent with that estimated from secondary ion mass spectroscopy (SIMS) measurements. In a photoluminescence (PL) measurement, a single peak spectrum is observed from 10 to 300 K. The temperature variation of the PL peak energy is as small as 0.1 meV/K.