Boundary-enhanced momentum relaxation of longitudinal optical phonons in GaN
Boundary-enhanced momentum relaxation of longitudinal optical phonons in GaN
复制标题
GaN 中纵向光学声子的边界增强动量弛豫
DOI：
10.1063/1.3681373
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发表时间：
2012-01-30
影响因子：
4
通讯作者：
Liu, B.
中科院分区：
文献类型：
--
作者：
Ma, N.;Shen, B.;Liu, B.
在室温下研究了沟道几何形状对n型GaN高场电子输运性质的影响。发现窄沟道中的电子比宽沟道中的电子漂移快得多。这种差异归因于纵向光学（LO）声子的边界增强动量弛豫，它通过增强电子能量耗散而减弱动量弛豫，从而提高了电子的漂移速度。在窄沟道中，有效LO声子动量弛豫时间约为1.067 ps。所提出的理论分析与实验结果的重要特征吻合得很好。
The influence of the channel geometry on the high-field electron transport properties has been investigated in n-type GaN at room temperature. It is found that electrons in narrow channels drift much faster than those in wide channels. This discrepancy is attributed to the boundary-enhanced momentum relaxation of longitudinal optical (LO) phonons, which increases the electron drift velocity through enhancing the electron energy dissipation while weakening the momentum relaxation. In narrow channels, the effective LO-phonon momentum relaxation time is about ∼0.67 ps. The suggested theoretical analysis coincides well with the important features of the experimental results.