INGAN/GAN QUANTUM WELLS STUDIED BY HIGH PRESSURE, VARIABLE TEMPERATURE, AND EXCITATION POWER SPECTROSCOPY
INGAN/GAN QUANTUM WELLS STUDIED BY HIGH PRESSURE, VARIABLE TEMPERATURE, AND EXCITATION POWER SPECTROSCOPY
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DOI：
10.1063/1.122588
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发表时间：
1998-11
影响因子：
4
通讯作者：
P. Perlin;C. Kisielowski;V. Iota;B. Weinstein;Laila S. Mattos;N. Shapiro;J. Krüger;E. Weber;Jinwei Yang
中科院分区：
文献类型：
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作者：
P. Perlin;C. Kisielowski;V. Iota;B. Weinstein;Laila S. Mattos;N. Shapiro;J. Krüger;E. Weber;Jinwei Yang
随着泵浦功率的增加，InxGa1−xN量子阱的光致发光和电致发光跃迁能量呈现出“蓝移”特征。这种效应要么归因于带尾填充，要么归因于压电场的屏蔽。我们研究了x=0.06, 0.10和0.15的InxGa1−xN/GaN量子阱中辐射复合的压力和温度行为。我们发现，虽然复合主要具有带对带的特性，但激发功率引起的蓝移可以唯一地归因于压电屏蔽。赝晶InxGa1−xN层中压电场的计算结果与光致发光Stokes红移的观测结果吻合得很好。观察到的光致发光压力系数（25-37 meV/GPa）非常低，到目前为止，它们的大小只能部分解释。
The energies of photo- and electroluminescence transitions in InxGa1−xN quantum wells exhibit a characteristic “blueshift” with increasing pumping power. This effect has been attributed either to band-tail filling, or to screening of piezoelectric fields. We have studied the pressure and temperature behavior of radiative recombination in InxGa1−xN/GaN quantum wells with x=0.06, 0.10, and 0.15. We find that, although the recombination has primarily a band-to-band character, the excitation-power induced blueshift can be attributed uniquely to piezoelectric screening. Calculations of the piezoelectric field in pseudomorphic InxGa1−xN layers agree very well with the observed Stokes redshift of the photoluminescence. The observed pressure coefficients of the photoluminescence (25–37 meV/GPa) are surprisingly low, and, so far, their magnitude can only be partially explained.