Frontiers in Electronic Materials - A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17th to 20th 2012, Aachen, Germany
Frontiers in Electronic Materials - A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17th to 20th 2012, Aachen, Germany
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电子材料前沿 - 自然会议电子材料前沿扩展摘要集，2012 年 6 月 17 日至 20 日，德国亚琛
DOI：
10.1002/9783527667703.ch50
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Hai P
中科院分区：
文献类型：
--
作者：
Hai P
这一章表明，通过在InAs中引入铁(Fe)和施主原子，可以制备一种新的铁磁半导体(FMS)，它具有通过Fe和独立载流子掺杂来控制铁磁性的能力。移动载流子的自旋退相时间--以及与之相关的相干自旋输运的长度尺度--是基本参数。本章研究了杂质原子的自旋-轨道耦合(SOC)和宿主原子的SOC的自旋-翻转散射过程。在这一章中，作者研究了缺氧EuO薄膜的磁性随厚度的变化。掺杂三角洲的载流子引起了相对于超交换的局部双交换增强，导致了反铁磁(AF)自旋的局部倾斜，提高了金属丰度。本章讨论了基于线性响应计算的密度泛函理论(DFT)计算铂/钴/X异质结中的电流感生扭矩。受控词汇反铁磁性材料；交换作用(电子)；缺氧氧化铕薄膜；半导体；自旋极化输运；自旋-旋转耦合
This chapter shows that by introducing iron (Fe) and donor atoms into InAs, it is possible to fabricate a new ferromagnetic semiconductor (FMS) with the ability to control ferromagnetism by both Fe and independent carrier doping. The spin dephasing time of mobile charge carriers ‐ and the associated length scale for coherent spin transport ‐ is fundamental parameters. The chapter considers the processes of spin‐flip scattering by spin‐orbit coupling (SOC) at the impurity as well as SOC at the host atoms. In the chapter the author studies how the magnetic properties of oxygen‐deficient EuO thin films vary as a function of thickness. The delta‐doped carriers cause a local enhancement of double‐exchange with respect to superexchange, resulting in local canting of the antiferromagnetic (AF) spins and enhanced metallicity. The chapter discusses density‐functional theory (DFT) calculations of the current‐induced torques in Pt/Co/X heterostructures based on linear response calculations.Controlled Vocabulary Termsantiferromagnetic materials; exchange interactions (electron); Oxygen‐deficient europium oxide thin films; semiconductors; spin polarised transport; spin‐rotation coupling