Novel 2000 V Normally-off MOS-HEMTs using AlN/GaN Superlattice Channel
Novel 2000 V Normally-off MOS-HEMTs using AlN/GaN Superlattice Channel
复制标题
DOI：
10.1109/ispsd.2019.8757585
复制
发表时间：
2019-05
期刊：
影响因子：
--
通讯作者：
Ming Xiao;Weihang Zhang;Yuhao Zhang;Hong Zhou;Kui Dang;Jincheng Zhang;Y. Hao
中科院分区：
文献类型：
--
作者：
Ming Xiao;Weihang Zhang;Yuhao Zhang;Hong Zhou;Kui Dang;Jincheng Zhang;Y. Hao
首次提出了具有AlN/GaN超晶格(SL)沟道的GaN基金属氧化物半导体高电子迁移率晶体管(MOS-HEMT)。这种新的沟道结构允许比传统的GaN沟道具有更好的电压阻断能力和热稳定性，以及比AlGaN沟道更高的电子迁移率。这种新的MOS-HEMT实现了最先进的静态和动态性能，包括击穿电压超过2000V，高导通电流密度768 mA/mm，阈值电压(VTH)1.0V，比导通电阻($\boldsign{R}_{\mathbf{on}}$)$7.7\mathbf{m}\mathbf{\Omega}\cot\mathbf{cm}^{2}$，热稳定性高达225°C，动态RON良好。这些结果表明，我们的新型AlN/GaN-SL沟道MOS-HEMT在高压和高温功率开关应用中具有巨大的潜力
We demonstrate for the first time a GaN-based metal oxide semiconductor high electron mobility transistor (MOS-HEMT) with AlN/GaN superlattice (SL) channels. This new channel structure allows for superior voltage blocking capabilities and thermal stability than conventional GaN channels, as well as higher electron mobility than AlGaN channels. State-of-the-art static and dynamic performance has been achieved in this new MOS-HEMT, including a breakdown voltage over 2000 V, a high ON current density of 768 mA/mm, a threshold voltage (VTH) of 1.0 V, a specific on-resistance ($\boldsymbol{R}_{\mathbf{ON}}$) of $7.7\ \mathbf{m}\mathbf{\Omega}\cdot \mathbf{cm}^{2}$, thermal stability up to 225 °C and good dynamic RON. These results show the great potential of our novel AlN/GaN-SL-channel MOS-HEMTs for highvoltage and high temperature power switching applications