Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates
Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates
复制标题
多孔GaN/蓝宝石衬底上GaN晶体生长的成核机制
DOI：
10.1039/d2ce00017b
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发表时间：
2022
期刊：
影响因子：
3.1
通讯作者：
Lei Zhang
中科院分区：
文献类型：
--
作者：
Lei Liu;Xu Zhang;Shouzhi Wang;Guodong Wang;Jiaoxian Yu;Xiaobo Hu;Qingjun Xu;Xiangang Xu;Lei Zhang
This paper describes the nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates. The growth behavior of epitaxially grown GaN on porous substrates is studied in detail for the first time at the nucleation stage.
