Matched micro-geometrical configuration leading to hetero-interfacial intimate contact of MoS2@UiO-66-NH2 Z-scheme heterojunction for efficient photocatalytic CO2 reduction
Matched micro-geometrical configuration leading to hetero-interfacial intimate contact of MoS2@UiO-66-NH2 Z-scheme heterojunction for efficient photocatalytic CO2 reduction
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DOI:
10.1016/j.jmst.2023.10.021
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发表时间:
2023-11
期刊:
影响因子:
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通讯作者:
Xin Yang;Tianyu Wang;Huiyang Ma;Weiliang Shi;Zhengqiang Xia;Qi Yang;Pan Zhang;Ren Ma;Gang Xie;Sanping Chen
中科院分区:
文献类型:
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作者:
Xin Yang;Tianyu Wang;Huiyang Ma;Weiliang Shi;Zhengqiang Xia;Qi Yang;Pan Zhang;Ren Ma;Gang Xie;Sanping Chen
Z-scheme heterojunction is an effective strategy in photocatalysis, when hetero-interfacial intimate contact is the center of high-performance Z-scheme heterojunction structure. Here,x-MoS2[x= plate (p), flower (f), and solid sphere (s)] with extensive optical absorption and high conductivity and stable UiO-66-NH2(y) (y= 100, 300, and 500 nm) with rich Lewis's acid sites were integrated to a series ofx-MoS2@UiO-66-NH2(y) Z-scheme heterojunctions, which were fully characterized and used for photocatalytic reduction of CO2(pCO2RR) into CH4and CO. In response to the difficult modification of MoS2and loose contact of composite bulk materials, the micro-geometric configurations on the size of UiO-66-NH2and the morphology of MoS2were optimized to achieve an intimate contact. The Z-scheme heterojunction f-MoS2@UiO-66-NH2(100 nm) with perfectly matched micro-geometric configuration exhibited an excellent electron consumption rate (Rele) of 263.78 μmol g–1h–1and a high CH4yield of 27.18 μmol g–1h–1with a selectivity of 82.44%, being far superior to most MoS2- and MOFs-based heterojunctions. Comprehensive investigations with extensive photoelectric characterizations, control experiments, and density functional theory (DFT) calculations demonstrate that the excellent photocatalytic performance of f-MoS2@UiO-66-NH2(100 nm) could be attributed to that (i) the low size of UiO-66-NH2strengthens mutual alignment and increases outer surface to maximize heterointerface contact with MoS2, accelerating the interfacial charge transfer; (ii) the hierarchical structure of f-MoS2with optimal basal plane curvature greatly reduces contact barriers to present a high charge throughput with a charge excitation rate of 1.967 mV, smooth initiating the 8-electron CO2methanation. Additionally, the durability of f-MoS2@UiO-66-NH2(100 nm) was also investigated.