High Internal Quantum Efficiency from AlGaN-Delta-GaN Quantum Well at 260 nm

High Internal Quantum Efficiency from AlGaN-Delta-GaN Quantum Well at 260 nm
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DOI：
10.1364/cleo_at.2020.af1i.2
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发表时间：
2020-05
期刊：
2020 Conference on Lasers and Electro-Optics (CLEO)
影响因子：
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通讯作者：
Cheng Liu;Kevin Lee;Galen Harden;A. Hoffman;H. Xing;D. Jena;Jing Zhang
Cheng Liu;Kevin Lee;Galen Harden;A. Hoffman;H. Xing;D. Jena;Jing Zhang
中科院分区：
其他
文献类型：
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作者：
Cheng Liu;Kevin Lee;Galen Harden;A. Hoffman;H. Xing;D. Jena;Jing Zhang

文献摘要

相似文献

通过分子束外延在传统 AlN/蓝宝石模板上生长的 AlGaN-delta-GaN 量子阱 (QW) 结构实现了高内量子效率 (85%)。在 260 nm 处观察到峰值发射波长。
High internal quantum efficiency (85%) was realized from the AlGaN-delta-GaN quantum well (QW) structure grown on a conventional AlN/sapphire template by Molecular Beam Epitaxy. The peak emission wavelength is observed at 260 nm.