Band offsets and Schottky barrier heights of high dielectric constant oxides
Band offsets and Schottky barrier heights of high dielectric constant oxides
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DOI：
10.1063/1.1506388
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发表时间：
2002-10-15
影响因子：
3.2
通讯作者：
Robertson, J
中科院分区：
文献类型：
--
作者：
Peacock, PW;Robertson, J
具有更高介电常数的氧化物被要求用作未来几代电子器件的栅极半导体。用局域密度赝势方法计算了多种候选栅氧化物的电子结构和能带偏移。预测的导带偏移量是类似的那些发现较早使用紧束缚的方法，并在可用的情况下，与实验值发现的光电发射和内部光电发射。就其能带偏移而言，可用作栅极氧化物的氧化物是ZrO 2、HfO 2、La 2 O 3、Y 2 O 3、Al 2 O 3、硅酸盐如ZrSiO 4和HfSiO 4以及铝酸盐如LaAlO 3。(C)2002年美国物理学会。
Oxides with higher dielectric constants are required to act as gate dielectrics for future generations of electronic devices. The electronic structure and band offsets of the oxides on Si have been calculated for many candidate gate oxides using the local density formalism pseudopotential method. The predicted conduction band offsets are similar to those found earlier using the tight-binding method, and where available, with experimental values found by photoemission and internal photoemission. The oxides which are acceptable as gate oxides in terms of their band offsets are ZrO2, HfO2, La2O3, Y2O3, Al2O3, silicates such as ZrSiO4 and HfSiO4 and aluminates such as LaAlO3. (C) 2002 American Institute of Physics.