Oxide-bypassed VDMOS (OBVDMOS): an alternative to superjunction high voltage MOS power devices
Oxide-bypassed VDMOS (OBVDMOS): an alternative to superjunction high voltage MOS power devices
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DOI：
10.1109/55.936359
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发表时间：
2001-08
影响因子：
4.9
通讯作者：
Y.C. Liang;K. Gan;G. Samudra
中科院分区：
文献类型：
--
作者：
Y.C. Liang;K. Gan;G. Samudra
The superjunction concept has been proposed to overcome the ideal silicon MOSFET limit, but its fabrication was handicapped by the precise charge balance requirement and inter-diffusion problem. We report a novel device structure termed oxide-bypassed VDMOS (OBVDMOS) that requires the well-established oxide thickness control instead of the difficult doping control in translating the limit to a higher blocking voltage. This is done by using metal-thick-oxide (MTO) at the sidewalls of drift region. One can choose to have a higher blocking voltage or increase the background doping. A PiN structure, essentially identical to MOSFET during off state, was fabricated to demonstrate the proposed concept. Its measured BV/sub dss/ of 170 V is 2.5 times higher than measured conventional device BV/sub dss/ of 67 V on the same silicon wafer.
