Theoretical studies of clustering reactions. Sequential reactions of SiH+3 with silane
Theoretical studies of clustering reactions. Sequential reactions of SiH+3 with silane
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成簇反应的理论研究。
DOI:
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发表时间:
1990
期刊:
影响因子:
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通讯作者:
K. Raghavachari
中科院分区:
文献类型:
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作者:
K. Raghavachari
The mechanisms for the sequential clustering reactions of SiH+3 with SiH4 have been studied by means of accurate quantum chemical techniques using polarized basis sets and including zero‐point corrections and the effects of electron correlation. Detailed reaction pathways including the necessary transition structures have been investigated to understand the structures and stabilities of the reaction intermediates and products. In accordance with the experimental observations of Mandich, Reents, and Kolenbrander, the reactions lead to the formation of Si2H+5 and Si3H+7 without significant overall barriers. In addition, bimolecular attachment complexes (Si2H+7,Si3H+9 and Si4H+11) bound by bridging hydrogen atoms are involved as reaction intermediates and have also been observed by Mandich et al. as collisionally stabilized products. Unusual hydrogen bridged complexes play a key role in the termination of the growth sequence. The first bottleneck in the sequence of growth reactions is due to the formation of...