Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces
Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces
复制标题
氮化物表面化学对外延氧化物/GaN 界面能带偏移的影响
DOI：
10.1063/1.5013605
复制
发表时间：
2018
影响因子：
4
通讯作者：
J. Ihlefeld
中科院分区：
文献类型：
--
作者：
E. Paisley;M. Brumbach;C. T. Shelton;A. Allerman;S. Atcitty;Christina M. Rost;J. A. Ohlhausen;B. Doyle;Z. Sitar;J. Maria;J. Ihlefeld
通过x射线光电子能谱测量，以外延（111）取向MgO薄膜和（0001）取向ga -极性GaN为例，证明了GaN表面和近表面化学对氧化物覆盖层带偏移的影响。在相同的清洗和MgO生长条件下，氮化镓亚表面氧杂质会影响氮化镓裸露表面带弯曲和最终带偏移到MgO异质层。当GaN表面氧原子浓度从0.9%增加到3.4%时，与MgO的价带偏移分别从1.68 eV减小到1.29 eV。本研究强调了氧化氮界面电子结构对GaN脱膜制备和生长条件的敏感性。通过x射线光电子能谱测量，以外延（111）取向MgO薄膜和（0001）取向ga -极性GaN为例，证明了GaN表面和近表面化学对氧化物覆盖层带偏移的影响。在相同的清洗和MgO生长条件下，氮化镓亚表面氧杂质会影响氮化镓裸露表面带弯曲和最终带偏移到MgO异质层。当GaN表面氧原子浓度从0.9%增加到3.4%时，与MgO的价带偏移分别从1.68 eV减小到1.29 eV。本研究强调了氧化氮界面电子结构对GaN脱膜制备和生长条件的敏感性。
GaN surface and near-surface chemistry influence on band offsets of oxide overlayers is demonstrated through X-ray photoelectron spectroscopy measurements using epitaxial (111)-oriented MgO films on (0001)-oriented Ga-polar GaN as a case study. For identical cleaning and MgO growth conditions, GaN subsurface oxygen impurities influence the GaN bare surface band bending and the ultimate band offset to MgO heterolayers. As the GaN surface oxygen concentration increases from an atomic concentration of 0.9% to 3.4%, the valence band offset to MgO decreases from 1.68 eV to 1.29 eV, respectively. This study highlights the sensitivity of the oxide/nitride interface electronic structure to GaN epilayer preparation and growth conditions.GaN surface and near-surface chemistry influence on band offsets of oxide overlayers is demonstrated through X-ray photoelectron spectroscopy measurements using epitaxial (111)-oriented MgO films on (0001)-oriented Ga-polar GaN as a case study. For identical cleaning and MgO growth conditions, GaN subsurface oxygen impurities influence the GaN bare surface band bending and the ultimate band offset to MgO heterolayers. As the GaN surface oxygen concentration increases from an atomic concentration of 0.9% to 3.4%, the valence band offset to MgO decreases from 1.68 eV to 1.29 eV, respectively. This study highlights the sensitivity of the oxide/nitride interface electronic structure to GaN epilayer preparation and growth conditions.