In-plane current-induced magnetization switching in CoGa/MnGa/MgO films
In-plane current-induced magnetization switching in CoGa/MnGa/MgO films
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DOI：
10.7567/apex.10.073004
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发表时间：
2017-06
影响因子：
2.3
通讯作者：
Masahiro Takikawa;Kazuya Z. Suzuki;R. Ranjbar;S. Mizukami
中科院分区：
文献类型：
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作者：
Masahiro Takikawa;Kazuya Z. Suzuki;R. Ranjbar;S. Mizukami
研究了具有垂直磁各向异性的2 nm厚的顺磁CoGA缓冲的2 nm厚的铁磁性L10MNGA层在微米级霍尔棒中的电流感应磁化转换.当注入电流密度为1011A/m2、面内纵向磁场足够大时，可以观察到明显的电流感应开关现象。面内场方向和COGA厚度的关系表明，这种确定性的双极开关主要来源于具有正自旋霍尔角的COGA中的自旋霍尔效应产生的类阻尼型自旋轨道扭矩。电流脉冲响应表明SOT开关是由焦耳加热提供热辅助的。
In-plane current-induced magnetization switching was investigated in a micron-sized Hall bar for the paramagnetic CoGa-buffered and MgO-capped 2-nm-thick ferrimagnetic L10 MnGa layer with perpendicular magnetic anisotropy. Current-induced switching was clearly observed when the in-plane longitudinal magnetic field applied was sufficiently large and at an injection current density of 1011 A/m2. The in-plane field direction and CoGa thickness dependence indicate that the deterministic bipolar switching primarily originates from a damping-like spin–orbit torque (SOT) arising from the spin-Hall effect in CoGa with a positive spin-Hall angle. The current pulse response suggested that the SOT switching was thermally assisted by Joule heating.