Sub-10-nm graphene nanoribbons with atomically smooth edges from squashed carbon nanotubes
Sub-10-nm graphene nanoribbons with atomically smooth edges from squashed carbon nanotubes
复制标题
DOI：
10.1038/s41928-021-00633-6
复制
发表时间：
2021-09-06
影响因子：
34.3
通讯作者：
Dai, Hongjie
中科院分区：
文献类型：
--
作者：
Chen, Changxin;Lin, Yu;Dai, Hongjie
石墨烯纳米带在电子和光电子器件的发展中具有潜在的应用前景。然而，制备具有光滑边缘、大带隙和高迁移率的狭长纳米带是具有挑战性的。在这里，我们展示了通过高压和热处理压碎碳纳米管，可以生产出具有原子光滑闭合边缘的亚10纳米宽的半导体石墨烯纳米带。通过这种方法，可以创建窄至1.4 nm的纳米带，并且样品中高达54%的单壁和双壁纳米管可以转化为边缘封闭的纳米带。我们也利用硝酸作为氧化剂，在高压下选择性地蚀刻压扁的奈米管边缘，制造边缘打开的奈米带。使用2.8 nm宽的边封闭纳米带制造的场效应晶体管显示出超过10(4)的开/关电流比，由此估计带隙约为494 meV。该器件还显示出2443 cm(2) V-1 s（-1）的场效应迁移率和7.42 ms的on-state沟道电导率。通过压扁碳纳米管，可以生产出具有原子光滑和无缺陷边缘的窄而长的石墨烯纳米带，并可用于制造具有2443 cm(2) V-1 s（-1）迁移率的亚3纳米宽的沟道场效应晶体管。
Graphene nanoribbons are of potential use in the development of electronic and optoelectronic devices. However, the preparation of narrow and long nanoribbons with smooth edges, sizeable bandgaps and high mobilities is challenging. Here we show that sub-10-nm-wide semiconducting graphene nanoribbons with atomically smooth closed edges can be produced by squashing carbon nanotubes using a high-pressure and thermal treatment. With this approach, nanoribbons as narrow as 1.4 nm can be created, and up to 54% of single- and double-walled nanotubes in a sample can be converted into edge-closed nanoribbons. We also fabricate edge-opened nanoribbons using nitric acid as the oxidant to selectively etch the edges of the squashed nanotubes under high pressure. A field-effect transistor fabricated using a 2.8-nm-wide edge-closed nanoribbon exhibits an on/off current ratio of more than 10(4), from which a bandgap of around 494 meV is estimated. The device also exhibits a field-effect mobility of 2,443 cm(2) V-1 s(-1) and an on-state channel conductivity of 7.42 mS.Narrow, long graphene nanoribbons with atomically smooth and defect-free edges can be produced by squashing carbon nanotubes, and can be used to fabricate a sub-3-nm-wide channel field-effect transistor with a mobility of 2,443 cm(2) V-1 s(-1).