Microscopic identification and electronic structure of a di-hydrogen-vacancy complex in silicon by optical detection of magnetic resonance.
Microscopic identification and electronic structure of a di-hydrogen-vacancy complex in silicon by optical detection of magnetic resonance.
复制标题
通过磁共振光学检测对硅中二氢空位配合物进行显微识别和电子结构。
DOI：
10.1103/physrevlett.64.3042
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发表时间：
1990
影响因子：
8.6
通讯作者：
Oehrlein
中科院分区：
文献类型：
--
作者：
Chen;Awadelkarim;Monemar;Lindström;Oehrlein
我们提出了一个氢相关的复杂缺陷的电子辐照，氢化，硼掺杂，单晶硅，磁共振的光学检测的显微鉴定。这种缺陷的对称性被推断为C 2v，并且从观察到的超精细相互作用中，缺陷被确定为二氢空位复合物，其中H原子钝化了单空位中四个悬挂键中的两个。自旋三重态是缺陷的最低电子激发态，它为自由载流子提供了一个强的复合通道
We present a microscopic identification of a hydrogen-related-complex defect in electron-irradiated, hydrogenated, boron-doped, single-crystalline silicon, by optical detection of magnetic resonance. The symmetry of this defect has been deduced as C 2v , and from the observed hyperfine interactions the defect is identified as a di-hydrogen-vacancy complex, where the H atoms passivate two of the four dangling bonds in a monovacancy. A spin triplet is the lowest electronic excited state of the defect, which exhibits a strong recombination channel for the free carriers