Temperature dependence of threshold current in p-doped quantum dot lasers
Temperature dependence of threshold current in p-doped quantum dot lasers
复制标题
p 掺杂量子点激光器中阈值电流的温度依赖性
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
M. Hopkinson
中科院分区：
文献类型：
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作者：
I. Sandall;P. Smowton;J. D. Thomson;T. Badcock;D. Mowbray;Huiyun Liu;M. Hopkinson
作者测量了阈值电流1300？结果表明，在p掺杂量子点激光器中，实现所需增益所需的注入水平的温度依赖性是产生所观察到的负T0的最大因素。
The authors measure the temperature dependence of the components of threshold current of 1300?nm undoped and p-doped quantum dot lasers and show that the temperature dependence of the injection level necessary to achieve the required gain is the largest factor in producing the observed negative T0 in p-doped quantum dot lasers.