Temperature dependence of in-plane magnetic anisotropy and anisotropic magnetoresistance in (Ga,Mn)As codoped with Li
Temperature dependence of in-plane magnetic anisotropy and anisotropic magnetoresistance in (Ga,Mn)As codoped with Li
复制标题
与锂共掺的（Ga,Mn）As 的面内磁各向异性和各向异性磁电阻的温度依赖性
DOI：
10.1063/1.4944328
复制
发表时间：
2016-03-14
影响因子：
4
通讯作者：
Ohno, Hideo
中科院分区：
文献类型：
--
作者：
Miyakozawa, Shohei;Chen, Lin;Ohno, Hideo
通过磁输运测量，研究了（Ga，Mn）As与Li共掺时的面内磁各向异性和各向异性磁电阻（AMR）随温度的变化关系。我们发现，平面单轴各向异性和AMR的符号在相同的温度（约75 K）变化，而平面霍尔效应的符号不依赖于温度。(C)2016 AIP Publishing LLC.
We evaluate the temperature dependence of in-plane magnetic anisotropy and anisotropic magnetoresistance (AMR) in (Ga,Mn)As codoped with Li by magnetotransport measurements. We find that the signs of in-plane uniaxial anisotropy and AMR change at the same temperature of similar to 75 K, and that the sign of planar Hall effect does not depend on temperature. (C) 2016 AIP Publishing LLC.