In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices
In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices
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DOI：
10.3390/nano10040666
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发表时间：
2020-04
期刊：
影响因子：
5.3
通讯作者：
N. Mizuno;F. Camino;Xu Du
中科院分区：
文献类型：
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作者：
N. Mizuno;F. Camino;Xu Du
在200 keV扫描透射电子显微镜（STEM）中实现像差校正电子束光刻（AC-EBL）是一种新技术，可用于基于具有单个纳米临界尺寸的二维原子晶体的量子器件的制造，允许观察更鲁棒的量子效应。在这项工作中，我们研究了使用AC-EBL的悬浮石墨烯场效应晶体管的纳米结构的电子束雕刻，专注于电子束曝光对器件电子输运质量的影响的原位表征。当在石墨烯沟道上（局部曝光）或在石墨烯沟道的外部附近（非局部曝光）执行AC-EBL时，石墨烯的电荷传输特性可能由于电荷掺杂和散射而受到显著影响。虽然非局部暴露的有害影响可以通过剧烈退火在很大程度上去除，但局部暴露引起的损伤是不可逆的，并且不能通过退火来修复。我们讨论了所观察到的曝光效应的可能原因。我们的研究结果为高能电子束光刻技术在纳米材料器件制造中的未来发展提供了指导。
The implementation of aberration-corrected electron beam lithography (AC-EBL) in a 200 keV scanning transmission electron microscope (STEM) is a novel technique that could be used for the fabrication of quantum devices based on 2D atomic crystals with single nanometer critical dimensions, allowing to observe more robust quantum effects. In this work we study electron beam sculpturing of nanostructures on suspended graphene field effect transistors using AC-EBL, focusing on the in situ characterization of the impact of electron beam exposure on device electronic transport quality. When AC-EBL is performed on a graphene channel (local exposure) or on the outside vicinity of a graphene channel (non-local exposure), the charge transport characteristics of graphene can be significantly affected due to charge doping and scattering. While the detrimental effect of non-local exposure can be largely removed by vigorous annealing, local-exposure induced damage is irreversible and cannot be fixed by annealing. We discuss the possible causes of the observed exposure effects. Our results provide guidance to the future development of high-energy electron beam lithography for nanomaterial device fabrication.