Epitaxial strain effect in perovskite RENiO3 films (RE = La-Eu) prepared by metal organic decomposition
Epitaxial strain effect in perovskite RENiO3 films (RE = La-Eu) prepared by metal organic decomposition
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DOI：
10.1016/j.physc.2014.07.005
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发表时间：
2014-10-15
影响因子：
1.7
通讯作者：
Naito, Michio
中科院分区：
文献类型：
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作者：
Ikeda, Ai;Manabe, Takaaki;Naito, Michio
我们报道了通过金属有机分解（MOD）合成钙钛矿 RENiO3 薄膜（RE = La、Pr、Nd、Sm 和 Eu）。由于材料简单，RENiO3 系列是研究金属-绝缘体转变的理想系统。缺点之一是 RENiO3 的本体合成需要在高氧压力下进行处理以稳定 Ni3+。从根本上来说，MOD 与固态反应类似，但事实证明，MOD 合成倾向于稳定 RENiO3，而不需要高氧压力。 MOD制备的薄膜表现出高结晶度和低电阻率。此外，我们还研究了外延应变效应，并观察到 LaAlO3 基底上的 PrNiO3 和 NdNiO3 薄膜的显着效应。 LaAlO3 上的 PrNiO3 薄膜中的金属-绝缘体转变被完全抑制，而 LaAlO3 上的 NdNiO3 薄膜中的金属-绝缘体转变温度显着降低。 (C) 2014 Elsevier B.V. 保留所有权利。
We report the synthesis of perovskite RENiO3 films (RE = La, Pr, Nd, Sm, and Eu) by metal organic decomposition (MOD). The RENiO3 family is an ideal system for studying the metal-insulator transition due to the simplicity of the materials. One of the drawbacks is that the bulk synthesis of the RENiO3 requires processing at high oxygen pressures to stabilize Ni3+. Fundamentally, MOD is similar to solid-state reaction, but it turned out that the MOD synthesis tends to stabilize RENiO3 without the need for high oxygen pressure. The films prepared by MOD show high crystallinity and low resistivity. Furthermore, we have investigated the epitaxial strain effect and observed a dramatic effect in PrNiO3 and NdNiO3 films on LaAlO3 substrates. The metal-insulator transition in the PrNiO3 films on LaAlO3 is fully suppressed, whereas the metal-insulator transition temperature is considerably lowered in the NdNiO3 films on LaAlO3. (C) 2014 Elsevier B.V. All rights reserved.