Enhanced sputtering from the F/Si(100) surface with extraction of the surface bond direction.
Enhanced sputtering from the F/Si(100) surface with extraction of the surface bond direction.
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DOI：
10.1103/physrevlett.107.113201
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发表时间：
2011-09
影响因子：
8.6
通讯作者：
N. Okabayashi;K. Komaki;Y. Yamazaki
中科院分区：
文献类型：
--
作者：
N. Okabayashi;K. Komaki;Y. Yamazaki
结果表明，高电荷态慢离子在F/Si（100）-2 1表面上具有很强的吸附F原子的能力，并能沿局部键方向沿着解吸F+离子.实际上，F+离子产额与入射电荷的立方成正比，F+离子沿沿着Si-F键方向发射，呈现四重对称模式。基于F2 p电子的电荷转移过程，通过扩展经典的过势垒模型，讨论了F+形成的触发过程.此外，我们还发现高电荷态离子诱导的F+离子的动能比电子激发的F+离子的动能低。
It was found that slow highly charged ions had a high ability to ionize F atoms on a F/Si(100)-2×1 surface and desorb F+ ions along the local bond direction. Actually, the F+ ion yields were proportional to the incident charge cubed, and the F+ ions were emitted along the Si-F bond directions showing a fourfold symmetry pattern. The trigger process of the F+ formation is discussed based on a charge transfer process of F 2p electrons by extending the classical over barrier model. Further, we found that the kinetic energy of highly charged ion induced F+ ions is lower than that of electron stimulated F+ ions caused by the removal of a F 2s electron.