Metastable Behavior on Cesium Fluoride-Treated Cu(In1-x,Gax)Se2 Solar Cells
Metastable Behavior on Cesium Fluoride-Treated Cu(In1-x,Gax)Se2 Solar Cells
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氟化铯处理的 Cu(In1-x,Gax)Se2 太阳能电池的亚稳态行为
DOI:
10.1002/pssr.201900701
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发表时间:
2020
期刊:
影响因子:
--
通讯作者:
Tokio Nakada
中科院分区:
文献类型:
--
作者:
Ishwor Khatri;Takahiko Yashiro;Tzu-Ying Lin;Mutsumi Sugiyama;Tokio Nakada
Metastable behavior of cesium fluoride (CsF)‐treated Cu(In1–x,Gax)Se2(CIGS) solar cells is investigated under heat‐light soaking (HLS) and heat‐soaking (HS) treatments. HLS increases open‐circuit voltage, fill factor, efficiency, and net carrier concentration and decreases short‐circuit current density, whereas heat‐soaking treatment acts oppositely. The performance of a CsF postdeposition treatment to CIGS thin film in selenium vapor, and closer to stoichiometry copper content, did not mitigate the open‐circuit voltage improvement after HLS. These results argue the traditional concept of theVSe–VCudivacancy complex for the total beneficial effect of HLS in alkali‐treated CIGS solar cells. The metastable behavior observed in the CsF‐treated devices due to the HLS and HS treatments is explained by the specific behavior of alkali‐containing new compounds at the surface and/or the migration of alkali metals at the surface and bulk regions.