Role of F on the Electrical Activation of As in Ge
Role of F on the Electrical Activation of As in Ge
复制标题
F 对 Ge 中 As 电活化的作用
DOI：
10.1149/2.009203jss
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发表时间：
2012
影响因子：
2.2
通讯作者：
V. Privitera
中科院分区：
文献类型：
--
作者：
G. Impellizzeri;E. Napolitani;S. Boninelli;J. Sullivan;J. Roberts;S. Buckman;S. Ruffell;F. Priolo;V. Privitera
已知氟强烈影响Si中的掺杂剂扩散和电激活。类似的效果可能会被利用在Ge中，以优化其在微电子学中的应用。阐明了热处理后F对Ge中As电激活的作用。我们已经发现，F，丰富的Ge矩阵与空位强烈影响的电响应的As掺杂的结。我们还证明了在射程末端附近形成的F-晶体团簇具有类似受体的行为。这些现象的特点是由化学和电剖面分析和正电子湮没寿命谱。
Fluorine is known to strongly influence the dopant diffusion and electrical activation in Si. Similar effects might be exploited in Ge for optimizing its application in microelectronics. The role of F on the electrical activation of As in Ge after thermal treatments is elucidated. We have found that F, enriching the Ge matrix with vacancies strongly affects the electrical response of As-doped junctions. We also demonstrated that the F-interstitials clusters, formed next to the end-of-range region, have an acceptor-like behavior. These phenomena are characterized by chemical and electrical profiling analyses and by positron annihilation lifetime spectrometry.