Proton-induced upset in SOI CMOS SRAMS
Proton-induced upset in SOI CMOS SRAMS
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DOI：
10.1109/tns.2004.839175
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发表时间：
2004-12
影响因子：
1.8
通讯作者：
S. T. Liu;H. Liu;D. Anthony;W. Heikkila;Harold L. Hughes;A. Campbell;E. L. Petersen;P. McMarr
中科院分区：
文献类型：
--
作者：
S. T. Liu;H. Liu;D. Anthony;W. Heikkila;Harold L. Hughes;A. Campbell;E. L. Petersen;P. McMarr
讨论了辐射硬绝缘体上硅CMOS SRAM的质子感生单粒子翻转（SEU）测量结果，并与广义优值（FOM）预测进行了比较。观察到测量的镦粗横截面与FOM预测的横截面之间存在相当大的差异。用双节点碰撞模型解释了测量的镦粗截面。计算出的双节点命中模型截面与SOI 1-和4-Mb SRAMS的测量数据进行了比较。
The results of proton-induced single-event upset (SEU) measurements on radiation hard silicon-on-insulator (SOI) CMOS SRAMS are discussed and compared with a generalized figure-of-merit (FOM) prediction. Fairly large differences between the measured upset cross section and the cross section predicted by the FOM prediction were observed. The measured upset cross section is explained with a double-node hit model. Calculated double-node hit model cross sections compare well with measured data for SOI 1- and 4-Mb SRAMS.