Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method
Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method
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DOI：
10.3390/ma8052769
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发表时间：
2015-05-21
期刊：
影响因子：
3.4
通讯作者：
Liou YJ
中科院分区：
文献类型：
--
作者：
Hsu CM;Tzou WC;Yang CF;Liou YJ
采用Zn2Ga2O5（Ga2O3 + 2ZnO，GZO）陶瓷和In2O3陶瓷同时溅射的方法，在室温下溅射30 min，制备了可见光区高透过率、低电阻率、高迁移率的IGZO薄膜。纯In2O3陶瓷靶的沉积功率固定为100 W，GZO陶瓷靶的沉积功率从80 W变为140 W。研究了GZO陶瓷靶材沉积功率对IGZO薄膜性能的影响。从SEM观察，所有沉积的IGZO薄膜显示出非常光滑且无特征的表面。从XRD图谱的测量中，仅观察到非晶结构。结果表明，GZO陶瓷靶材的沉积功率对IGZO薄膜的Eg值、霍尔迁移率、载流子浓度和电阻率有很大的影响。二次离子质谱（SIMS）分析IGZO薄膜的厚度分布发现，In和Ga元素分布均匀，Zn元素分布不均匀。二次离子质谱分析结果还表明，随着沉积功率的增加，Ga和Zn元素的浓度增加，In元素的浓度基本不变。
High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the SEM observations, all of the deposited IGZO thin films showed a very smooth and featureless surface. From the measurements of XRD patterns, only the amorphous structure was observed. We aimed to show that the deposition power of GZO ceramic target had large effect on the Eg values, Hall mobility, carrier concentration, and resistivity of IGZO thin films. Secondary ion mass spectrometry (SIMS) analysis in the thicknesses’ profile of IGZO thin films found that In and Ga elements were uniform distribution and Zn element were non-uniform distribution. The SIMS analysis results also showed the concentrations of Ga and Zn elements increased and the concentrations of In element was almost unchanged with increasing deposition power.