A two-phase high step down coupled-inductor converter for next generation low voltage CPU
A two-phase high step down coupled-inductor converter for next generation low voltage CPU
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用于下一代低压CPU的两相高降压耦合电感转换器
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
T. Nabeshima
中科院分区：
文献类型：
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作者：
K. Matsumoto;K. Nishijima;T. Sato;T. Nabeshima
提出了一种新型的适用于下一代低压CPU的两相高压降压耦合电感变换器。该转换器具有非常高的降压特性，因为Vo/Vi = D/4。所有开关元件的开关损耗和噪声被充分地减小，因为在开关周期的漏-源电压被减小到输入源电压的四分之一。具有低导通电阻和低Qg（总栅极电荷）特性的低耐压MOSFET可以用于所有开关元件，因为主开关和同步整流器开关的最大电压应力分别减小到输入源电压的一半和四分之一。此外，流过双稳态转换器的分支电流自动地且基本上平衡，而无需电流检测和平衡控制。上述优良特性仅用三个附加电容器即可实现。
In this paper, a novel two-phase high step down coupled-inductor converter for next generation low voltage CPU is proposed. This converter has a very high step down characteristic as Vo/Vi = D/4. The switching loss and noise of all switching elements are sufficiently reduced because the drain-source voltages at switching periods are reduced to a quarter of the input source voltage. Low withstand voltage MOSFETs with low on resistance and low Qg(total gate charge) characteristics are possible to use for the all switching elements because the maximum voltage stresses of the main switches and the synchronous rectifier switches are reduced to a half and a quarter of the input source voltage respectively. Further, the branch currents flowed through the paralleled converters are automatically and mostly balanced without the current detection and balance control. The above fine characteristics are simply achieved with three additional capacitors.