Influence of interface modifications on carrier mobilities in rubrene single crystal ambipolar field-effect transistors
Influence of interface modifications on carrier mobilities in rubrene single crystal ambipolar field-effect transistors
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DOI：
10.1063/1.3153946
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发表时间：
2009-06
影响因子：
3.2
通讯作者：
Yan Wang;R. Kumashiro;R. Nouchi;Naoya Komatsu;K. Tanigaki
中科院分区：
文献类型：
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作者：
Yan Wang;R. Kumashiro;R. Nouchi;Naoya Komatsu;K. Tanigaki
使用由 Au/Ca 电极和聚甲基丙烯酸甲酯 (PMMA)、聚对二甲苯-C 和六甲基二硅氮烷 (HMDS) 改性的 SiO2 栅极绝缘体组装而成的红荧烯单晶，研究双极场效应晶体管 (FET) 中的载流子迁移率。实验结果根据两个界面效率参数（注入效率和传输效率）进行解释。电子载流子注入效率可以使用 Au-Au 和 Au-Ca 电极进行评估。比较了具有 PMMA、聚对二甲苯-C 和 HMDS 改性层的器件的电子载流子传输效率。半导体-栅极电介质界面处的浅陷阱密度被证明不是控制 FET 迁移率的最重要因素。相反，与表面分子结构相关的表面极化被认为是另一个可能的参数。此外，在具有 PMMA 改性绝缘体的器件中观察到发光随施加栅极电压的变化......
Carrier mobilities in ambipolar field-effect transistors (FETs) are studied using a rubrene single crystal assembled with Au/Ca electrodes and SiO2 gate insulators modified by polymethylmethacrylate (PMMA), parylene-C, and hexamethyldisilazane (HMDS). The experimental results are interpreted in terms of the two interfacial efficiency parameters, the injection, and the transport efficiencies. The efficiency of electron carrier injection can be evaluated using Au–Au and Au–Ca electrodes. The efficiency of electron carrier transport was compared among the device with PMMA, parylene-C, and HMDS modification layer. The shallow trap density at the semiconductor-gate dielectric interface is shown not to be the most important factor for controlling FET mobilities. Instead, the surface polarization associated with the surface molecular structure is proposed to be another possible parameter. Furthermore, the shift of light emitting with applied gate voltage was observed in a device with PMMA modified insulator and ...