Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures
Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures
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DOI：
10.1063/1.1332424
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发表时间：
2001-01
影响因子：
3.2
通讯作者：
M. Fischetti
中科院分区：
文献类型：
--
作者：
M. Fischetti
在具有多晶Si栅极的金属氧化物半导体结构中，衬底的反向沟道中的电子经由长程库仑相互作用与栅极中的电子散射。对于薄的氧化物，这些相互作用可以导致从沟道到栅极的动量的显著转移，从而降低衬底中的二维电子气的有效迁移率。我们目前的界面等离子体激元在多晶Si/SiO2/Si结构中的色散的计算，在长波长的限制，使用随机相位近似得到的结果进行比较。利用前一个模型，我们计算了等离子体散射对Si反型层中有效电子迁移率的影响。我们发现一个显着减少的流动性氧化物薄于约3纳米。
In metal–oxide–semiconductor structures with polycrystalline Si gates, electrons in the inverted channel of the substrate scatter with electrons in the gate via long-range Coulomb interactions. For thin oxides, these interactions can cause a significant transfer of momentum from the channel to the gate, thus reducing the effective mobility of the two-dimensional electron gas in the substrate. We present calculations of the dispersion of the interface plasmons in poly-Si/SiO2/Si structures, comparing the results obtained in the long-wavelength limit to those obtained using the random-phase approximation. Employing the former model, we compute the effect of plasmon scattering on the effective electron mobility in Si inversion layers. We find a significant reduction of the mobility for oxides thinner than about 3 nm.