Interfacial rearrangements and strain evolution in the thin film growth of ZnPc on glass
Interfacial rearrangements and strain evolution in the thin film growth of ZnPc on glass
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玻璃上 ZnPc 薄膜生长中的界面重排和应变演化
DOI：
10.1103/physrevmaterials.6.033401
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发表时间：
2022-03
影响因子：
3.4
通讯作者：
T. Derrien;A. Lauritzen;P. Kaienburg;E. Hancox;C. Nicklin;M. Riede
中科院分区：
文献类型：
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作者：
T. Derrien;A. Lauritzen;P. Kaienburg;E. Hancox;C. Nicklin;M. Riede
我们报告的真空沉积的酞菁锌（ZnPc）薄膜在玻璃上的生长特性，通过结合原位掠入射X射线散射，X射线反射率，和原子力显微镜。我们发现，在室温下的生长过程中，通过形成两个结构独特的衬底诱导界面层，然后生长的γ -ZnPc多晶型物（厚度为100 μ m）。0 nm）。随着体相γ -ZnPc的生长，大量的面外晶格应变（相对于γ -ZnPc粉末约15%）在薄膜生长期间持续松弛。厚度约为13 nm后，应变松弛速率减慢，对应于从层生长到岛生长的转变。这些发现揭示了ZnPc的实时微观结构演变，并强调了衬底诱导应变对薄膜生长的重要性。
We report on the characterization of the growth of vacuum-deposited zinc phthalocyanine (ZnPc) thin films on glass through a combination of in situ grazing incidence x-ray scattering, x-ray reflectivity, and atomic force microscopy. We found that the growth at room temperature proceeds via the formation of two structurally unique substrate-induced interfacial layers, followed by the growth of the γ -ZnPc polymorph thereafter (thickness ≈ 1 . 0 nm). As the growth of the bulk γ -ZnPc progresses, a substantial out-of-plane lattice strain ( ≈ 15% relative to γ -ZnPc powder) is continually relaxed during the thin film growth. The rate of strain relaxation was slowed after a thickness of ≈ 13 nm, corresponding to the transition from layer growth to island growth. The findings reveal the real-time microstructural evolution of ZnPc and highlight the importance of substrate-induced strain on thin film growth.