Fabrication of Cu2SnS3 thin film solar cells using Cu/Sn layered metallic precursors prepared by a sputtering process
Fabrication of Cu2SnS3 thin film solar cells using Cu/Sn layered metallic precursors prepared by a sputtering process
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DOI：
10.1016/j.solener.2016.09.041
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发表时间：
2015-11
期刊：
影响因子：
6.7
通讯作者：
Ju-Yeon Lee;Inyoung Kim;Mahesh P. Surywanshi;U. Ghorpade;Dong‐Seon Lee;J. H. Kim
中科院分区：
文献类型：
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作者：
Ju-Yeon Lee;Inyoung Kim;Mahesh P. Surywanshi;U. Ghorpade;Dong‐Seon Lee;J. H. Kim
作为Cu(In，Ga)(S，Se)2(CIGS)和Cu2ZnSn4(S，Se)基薄膜太阳电池的替代品，三元硫系半导体Cu2SnS3(CTS)是一种新兴的材料，具有合适的光学带隙能量范围(0.93~1.77 eV)和高吸收系数(>；104 cm−1)。在本研究中，我们报道了用快速热分析方法在石墨盒中对溅射的铜锡金属前驱体在S蒸气气氛下进行热处理，从而制备出高质量的CTS薄膜。此外，系统地研究了石墨盒中不同的S蒸气分压在热处理过程中对薄膜性能的影响。研究发现，薄膜的性质和光伏性能强烈地依赖于S蒸气分压。从(1+1+2)、(2+2+0)和(3+1+2)晶面的X射线衍射谱中观察到了单斜晶系的晶体结构，并用拉曼光谱进一步证实了单斜晶系的晶体结构，其拉曼峰位于295和354cmCTS。用60 mg的S粉末对−薄膜进行外量子效率测量，推测其直接带隙能为0.91eV。在工艺参数尚未优化的情况下，用60 mm S粉末对薄膜进行了退火处理，获得了2.21%的功率转换效率，短路电流密度为29.7 mA/cm~2，开路电压为179.5 mV，填充因子为41%。
As an alternative to Cu(In,Ga)(S,Se)2(CIGS) and Cu2ZnSn(S,Se)4(CZTS)-based thin film solar cells (TFSCs), the ternary chalcogenide semiconductor Cu2SnS3(CTS) is an emerging material with suitable optical band gap energy ranging from 0.93 to 1.77 eV and high absorption coefficients (>104cm−1). In this study, we report the preparation of high-quality CTS thin films by the annealing of the sputtered Cu-Sn metallic precursor under S vapor atmosphere in a graphite box using the RTA process. Furthermore, the influence of different S vapor partial pressures in the graphite box during annealing on the properties of the CTS thin films has been investigated systematically. It is observed that the properties and photovoltaic performance of the CTS thin films are strongly dependent on the S vapor partial pressure during annealing. The monoclinic crystal structure is observed from X-ray diffraction (XRD) of the (1 1 2), (2 2 0), and (3 1 2) planes, and it is further confirmed using Raman spectroscopy by the presence of Raman peaks at 295 and 354 cm−1. The direct band gap energy is found to be 0.91 eV by extrapolation from external quantum efficiency (EQE) measurement of a CTS thin film annealed using 60 mg of S powder. The preliminary best power conversion efficiency (PCE) of 2.21% with a short circuit current density of 29.7 mA/cm2, an open circuit voltage of 179.5 mV, and a fill factor of 41% have been obtained for a CTS thin film annealed using 60 mg of S powder, although the processing parameters have not been optimized.