Analysis of High-Acceleration-Voltage Scanning Electron Microscope Images
Analysis of High-Acceleration-Voltage Scanning Electron Microscope Images
复制标题
高加速电压扫描电子显微镜图像分析
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
T. Terasawa
中科院分区：
文献类型：
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作者：
A. Moniwa;T. Terasawa
通过计算机模拟分析在高加速电压（例如 200 kV）下获得的孔或沟槽的扫描电子显微镜 (SEM) 图像。前向散射初级电子 (SE1) 生成的二次电子和后向散射初级电子 (SE2) 生成的二次电子是分别计算的，尽管探测器会毫无区别地捕获 SE1 和 SE2。在 200 kV 下加速的初级电子的直接穿透会在样品中产生较大的边缘效应和轻微的横向散射。因此，提供表面形貌信息的SE1强度的图像对比度变高。此外，由于SE2强度几乎是均匀的背景，因此很容易从检测到的二次电子中提取SE1强度。对于样品内部结构的观察，尽管 SE2 对比度在 200 kV 时较低，但样品中的少量横向散射会产生清晰的图像。
Scanning electron microscope (SEM) images of holes or trenches obtained at high acceleration voltages, such as 200 kV, are analyzed by computer simulation. Secondary electrons generated by forward-scattered primary electrons (SE1s), and those by backward-scattered primary electrons (SE2s) are calculated separately, although a detector catches both SE1 and SE2 without distinction. The straightforward penetration of the primary electrons accelerated at 200 kV gives large edge effects and slight lateral scattering in the sample. Therefore, the image contrast of the SE1 intensity, which provides information on surface topography, becomes high. Moreover, as the SE2 intensity is almost a uniform background, it becomes easy to extract the SE1 intensity from the detected secondary electrons. For observations of the inside structure of a sample, although the SE2 contrast is low at 200 kV, a small degree of lateral scattering in the sample results in a sharp image.