Temperature Dependence of Electrical Resistivity in Ferromagnetic GdNi Single Crystal
Temperature Dependence of Electrical Resistivity in Ferromagnetic GdNi Single Crystal
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DOI：
10.1143/jpsj.49.246
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发表时间：
1980-07
影响因子：
1.7
通讯作者：
K. Mori;Kiyoo Sato
中科院分区：
文献类型：
--
作者：
K. Mori;Kiyoo Sato
在4.2~30 0K温度范围内研究了GdNi单晶的电阻率与温度的关系，居里温度TC为72±1K，电阻率与T2成正比，a轴为6.1×10-9Ω·cm·K-2，b轴为5.4×10-8Ω·cm·K-2。B轴的磁无序导致的ρ磁阻比a轴和c轴的大10倍左右。这种各向异性被解释为传导电子的有效质量之差。根据定域磁模型估算了磁交换相互作用Jeff值为0.07 eV。
The temperature dependence of the electrical resistivity of GdNi single crystal has been investigated in the temperature range 4.2–300 K. The Curie temperature T c was 72±1 K. The resistivity was propotional to T 2 below T c with large coefficients 6.1×10 -9 Ω·cm·K -2 for a -axis and 5.4×10 -8 Ω·cm·K -2 for b -axis. The resistivity ρ mag due to magnetic disorder for b -axis was about ten times larger than for a - and c -axes. This anisotropy was interpreted as the difference of the effective mass of conduction electrons. The magnetic exchange interaction J eff was estimated as 0.07 eV on the basis of the localized magnetic model.