Transition-metal pentatellurides as potential low-temperature thermoelectric refrigeration materials
Transition-metal pentatellurides as potential low-temperature thermoelectric refrigeration materials
复制标题
DOI：
10.1103/physrevb.60.13453
复制
发表时间：
1999-11
影响因子：
3.7
通讯作者：
R. Littleton;T. Tritt;J. Kolis;D. Ketchum
中科院分区：
文献类型：
--
作者：
R. Littleton;T. Tritt;J. Kolis;D. Ketchum
讨论了低温热电制冷器件材料未来发展的重要性。具体而言，结果上提出了一个有趣的一类材料称为五碲化物，HfTe 5和ZrTe 5，这已显示出有前途的低温热电性能（100 K，T，250 K）。置换掺杂发生在金属位点上作为Hf 12 xZrxTe 5固溶体，和Te位点上与Se。适当的掺杂导致电阻率的降低和热电势的增强，从而导致功率因数的加倍~电子性能！这在这些温度范围内与现有热电材料的功率因数非常有竞争力。@S0163-1829~99！06743-0#
The importance of the future development of materials for use in low-temperature thermoelectric refrigeration devices is discussed. Specifically, results are presented on an interesting class of materials called pentatellurides, HfTe5 and ZrTe5, which have shown promising low-temperature thermoelectric properties (100 K ,T,250 K). Substitutional doping occurs both on the metal site as Hf12xZrxTe5 solid solutions, and on the Te site with Se. Proper doping leads to a decrease in resistivity and an enhancement of thermopower which results in a doubling of the power factor ~electronic properties! which is then very competitive with the power factor of existing thermoelectric materials in these temperature regimes. @S0163-1829~99!06743-0#