Zero-valent Au, Cu, and Sn intercalation into GeS nanoribbons: tailoring ultrafast photoconductive response
Zero-valent Au, Cu, and Sn intercalation into GeS nanoribbons: tailoring ultrafast photoconductive response
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DOI：
10.1117/12.2546691
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发表时间：
2020-02
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影响因子：
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通讯作者：
K. Kushnir;Teng Shi;Leticia Damian;Auddy Anilao;K. Koski;L. Titova
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作者：
K. Kushnir;Teng Shi;Leticia Damian;Auddy Anilao;K. Koski;L. Titova
硫化锗(Ge)是一种具有高载流子迁移率和中等禁带宽度(多层晶体约1.5 eV)的二维半导体，有望用于高速光电子学和能量转换。在这里，我们利用时间分辨太赫兹光谱研究了金、铜和锡的插层对GeS纳米带的光致激发载流子动力学和瞬时光电导的影响。我们发现零价金属对光激发载流子寿命和迁移率有不同的影响。Ge与铜的插层使载流子寿命从~120ps降低到60ps，而Au和Sn的插层不会使载流子寿命降低。同时，铜、锡和金的插层显著地增加了光激发载流子的散射时间(~120fs比~65fs)，突出了零价金属插层作为一种工具用于设计高速电子器件中GES纳米结构的光电性能的潜力。
Germanium sulfide (GeS) is a 2D semiconductor with high carrier mobility and a moderate band gap (~1.5 eV for multilayer crystals), which holds promise for high-speed optoelectronics and energy conversion. Here, we use time resolved THz spectroscopy to investigate how intercalation of Au, Cu, and Sn impacts the photoexcited carrier dynamics and transient photoconductivity of GeS nanoribbons. We find that zero-valent metals affect the photoexcited carrier lifetime and mobility in different ways. Intercalation of GeS with Cu reduces the lifetime of carriers from ~ 120 ps to 60 ps, while Au and Sn intercalation do not. At the same time, intercalation with Cu, Sn and Au significantly enhances the scattering time of photoexcited carriers (~120 fs vs ~65 fs without intercalation), highlighting the potential of zero-valent metal intercalation as a tool for engineering the optoelectronic properties of GeS nanostructures for application in high-speed electronic devices.