Dry-transferred CVD graphene for inverted spin valve devices
Dry-transferred CVD graphene for inverted spin valve devices
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DOI：
10.1063/1.5000545
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发表时间：
2017-10-09
影响因子：
4
通讯作者：
Stampfer, Christoph
中科院分区：
文献类型：
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作者：
Droegeler, Marc;Banszerus, Luca;Stampfer, Christoph
将化学气相沉积(CVD)生长的高迁移率石墨烯集成到自旋输运器件中是石墨烯自旋电子学的关键任务之一。我们使用van der Waals拾取技术将六方氮化硼(HBN)将CVD石墨烯从铜生长衬底转移到预定义的Co/MgO电极上，建立了倒转自旋阀器件。提出了两种方法：(I)CVD-石墨烯/hBN堆叠首先被图案化成条，然后由第二个较大的hBN晶体转移到自旋阀电极上；(Ii)CVD-石墨烯/hBN堆叠的直接转移。我们报道了在CVD石墨烯中记录的高自旋寿命，在室温下高达1.75 ns。总体而言，我们的器件的性能与由剥离的石墨烯制成的器件相当，也揭示了纳秒的自旋寿命。我们希望我们的干式转移方法不仅为自旋电子学应用，也为基于CVD-石墨烯的纳米电子器件的更先进的器件几何结构铺平道路，在组装最终的van der Waals异质结构之前，需要对CVD石墨烯进行图案化。由AIP出版公司出版。
Integrating high-mobility graphene grown by chemical vapor deposition (CVD) into spin transport devices is one of the key tasks in graphene spintronics. We use a van der Waals pick-up technique to transfer CVD graphene by hexagonal boron nitride (hBN) from the copper growth substrate onto predefined Co/MgO electrodes to build inverted spin valve devices. Two approaches are presented: (i) a process where the CVD-graphene/hBN stack is first patterned into a bar and then transferred by a second larger hBN crystal onto spin valve electrodes and (ii) a direct transfer of a CVD-graphene/hBN stack. We report record high spin lifetimes in CVD graphene of up to 1.75 ns at room temperature. Overall, the performances of our devices are comparable to devices fabricated from exfoliated graphene also revealing nanosecond spin lifetimes. We expect that our dry transfer methods pave the way towards more advanced device geometries not only for spintronic applications but also for CVD-graphene-based nanoelectronic devices in general where patterning of the CVD graphene is required prior to the assembly of final van der Waals heterostructures. Published by AIP Publishing.