70+ μm deep domain inversion in X-cut LiNbO3 and its use in a high-speed bandpass integrated-optic modulator
70+ μm deep domain inversion in X-cut LiNbO3 and its use in a high-speed bandpass integrated-optic modulator
复制标题
X 切割 LiNbO3 中的 70+ μm 深域反转及其在高速带通集成光调制器中的应用
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
R. Ramaswamy
中科院分区：
文献类型：
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作者：
T. Kishino;R. Tavlykaev;R. Ramaswamy
报道了X切LiNbO 3晶体的深畴反转技术。深度达70 μm的DI区，即，足够深的几乎任何导波应用，获得电场极化，甚至更深的DI区域可能。作为DI技术的一个应用，一个带通行波马赫-曾德尔调制器的中心在21 GHz的15 GHz的带宽被证明。
A deep domain inversion (DI) technique for X-cut LiNbO3 is reported. DI regions as deep as 70 μm, i.e., deep enough for virtually any guided-wave application, were obtained by electric-field poling, with even deeper DI regions possible. As an application of the DI technique, a bandpass traveling-wave Mach–Zehnder modulator is demonstrated with a 15 GHz bandwidth centered at 21 GHz.