The physics of ferroelectric memories
The physics of ferroelectric memories
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DOI:
10.1063/1.882324
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发表时间:
1998-07-01
期刊:
影响因子:
3.5
通讯作者:
Ramesh, R
中科院分区:
文献类型:
--
作者:
Auciello, O;Scott, JF;Ramesh, R
Imagine you are in the last stages of typing your thesis. The year is 1980, and it's a hot, hazy summer afternoon. A thunderstorm brews on the horizon. Tense and tired, you have forgotten to save the document on your hard disk. Suddenly, lightning strikes! Your computer shuts down. Your final chapter is lost.Wistfully, you long for the day when everything you write is automatically stored in a nonvolatile memory system as soon as you write it and does not vanish if there's a power cut. What do I need to make this happen? you ask yourself. The answer is a fast, random-access, solid-state memory that is cheap, reliable and, most important of all, intrinsically nonvolatile—that is, it behaves like a magnetic disk storage system. And while you're contemplating the electronic future, imagine also that you have an electronic smart card that you can use for everything from providing emergency crews with your health records to transacting all your expenses without having to sign a credit card slip or a check. Now, fast-forward your mind to 1998, enter the new world of nonvolatile ferroelectric random-access memories—and read on!