Dark defect charge dynamics in bulk chemical-vapor-deposition-grown diamonds probed via nitrogen vacancy centers
Dark defect charge dynamics in bulk chemical-vapor-deposition-grown diamonds probed via nitrogen vacancy centers
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DOI：
10.1103/physrevmaterials.4.053602
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发表时间：
2020-05-12
影响因子：
3.4
通讯作者：
Meriles, C. A.
中科院分区：
文献类型：
--
作者：
Lozovoi, A.;Daw, D.;Meriles, C. A.
虽然化学气相沉积（CVD）是合成金刚石晶体的首选途径之一，但对生长过程中产生的点缺陷的全面了解仍然不完整。在这里，我们利用1b型CVD金刚石中氮空位（NV）中心的电荷和自旋特性来暴露光学和磁性暗点缺陷，尽管与取代氮的丰度相当（如果不大于），但迄今为止几乎未被注意到。间接检测到的光致发光光谱表明，施主状态1.6 eV以上的价带，虽然缺陷的微观结构和成分仍然难以捉摸。我们的研究结果可能会证明相关的依赖于CVD生长的单晶金刚石的应用程序越来越多。
Although chemical vapor deposition (CVD) is one of the preferred routes to synthetic diamond crystals, a full knowledge of the point defects produced during growth is still incomplete. Here we exploit the charge and spin properties of nitrogen vacancy (NV) centers in type-1b CVD diamond to expose an optically and magnetically dark point defect, so far virtually unnoticed despite an abundance comparable to (if not greater than) that of substitutional nitrogen. Indirectly detected photoluminescence spectroscopy indicates a donor state 1.6 eV above the valence band, although the defect's microscopic structure and composition remain elusive. Our results may prove relevant to the growing set of applications that rely on CVD-grown single-crystal diamond.